A minuscule 0.1-nanometer (Ångström-scale) displacement of atomic layers is sufficient to induce a resistance change by tens of millions of times. Leveraging two-dimensional van der Waals heterostructure interface engineering technology, a research team from the Institute of Semiconductors at the Chinese Academy of Sciences has successfully surmounted the challenge of achieving a high on-off ratio while maintaining high durability in sliding ferroelectric tunneling junctions. Researchers mentioned that if large-scale device arrays and their accompanying circuits can be refined in the future, these devices hold the promise of facilitating faster and more energy-efficient data storage and computation. They could be integrated into devices such as mobile phones and computers, offering a novel approach to mitigate the conflict between computational capability and energy consumption, and fostering the realization of a new computing architecture that seamlessly integrates storage and computation. The pertinent findings were published in the journal Science on September 11.