On September 11, news emerged that a research team from the Institute of Semiconductors, Chinese Academy of Sciences, has made a significant technological leap through interface engineering of two-dimensional van der Waals heterostructures. By facilitating an atomic layer slip at an incredibly precise 0.1-nanometer scale, they have induced a staggering ten-million-times change in resistance. This achievement overcomes the long-standing industry challenge of achieving a high on/off ratio while maintaining high durability in slip ferroelectric tunneling junctions.

The researchers mentioned that, moving forward, once large-scale device arrays and their supporting circuits are refined, such devices hold the potential to enable faster and more energy-efficient data storage and computation. They could be integrated into terminal hardware like mobile phones and computers, offering a novel approach to mitigate the conflict between escalating computing power and constrained power consumption. Moreover, this breakthrough paves the way for the realization of a new computing architecture that seamlessly integrates storage and computation capabilities. The related research findings were published in the esteemed international academic journal Science on September 11.