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Gallium Oxide MOSFET: The Pivotal Role of the Interface
4 hour ago /
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Author：小编
β-Ga₂O₃ is making the leap from laboratory research to practical applications in power electronics. However, the performance of its MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) is currently constrained by the quality of the gate interface. Drawing from the wealth of experience gained with GaAs (Gallium Arsenide) MOSFETs, we find that optimizing the subthreshold swing—a key parameter in transistor performance—through interface engineering and dielectric screening techniques offers a promising avenue. This approach paves the way for the development of an enhanced and highly reliable β-Ga₂O₃ device platform, which is crucial for advancing power electronics technology.
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