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With Western export controls on semiconductor equipment to China continually tightening, the Chinese semiconductor sector is strategically pivoting its R&D efforts toward vertical stacking technology. This shift aims to surmount the transistor density bottleneck, a challenge exacerbated by the lack of access to cutting-edge extreme ultraviolet (EUV) lithography machines. Naura, a prominent Chinese semiconductor equipment manufacturer, has recently made waves with a paper published in an IEEE journal. The paper details a significant breakthrough in the fabrication of next-generation memory chips, specifically 3D DRAM. Naura's innovative two-step cyclic etching technique holds promise for domestic memory chip producers like ChangXin Memory, offering them a viable means to sidestep sanctions and propel the autonomous growth of China's semiconductor industry.
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