Kioxia has begun delivering samples of 1Tb TLC storage devices featuring its 9th generation BiCS FLASH 3D flash memory technology to partners for functional verification prior to mass production. This technology employs a 230-layer stacking process, developed based on 8th generation technology and advanced CMOS processes. The NAND interface speed reaches up to 4.8Gb/s, representing a 33% increase over the 8th generation and matching the performance of the 10th generation. It is primarily targeted at scenarios such as AI-enabled PCs and smartphones with mid-to-low storage capacities.
