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Further Enhance Logical Performance: Samsung Electronics Plans to Introduce 2nm Base Die in HBM5 Memory
3 day ago /
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Author：小编
Samsung plans to adopt a 2nm base die in the HBM5 generation, with an expected operating speed increase of over 50% compared to HBM4E. This base die supports higher-density through-silicon vias, significantly improving performance and energy efficiency. Previously, Samsung's HBM4 and HBM4E both utilized 4nm base dies, with HBM4E achieving high-speed operation at 14+ Gbps through the application of high-density, ultra-high-performance devices, while also reducing power consumption and improving heat dissipation paths by optimizing metal layer arrangements.
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