Samsung Electronics is set to forge a partnership with ASML, focusing on the development of high-numerical-aperture extreme ultraviolet (EUV) lithography technology. Together, they will spearhead the industry's shift from the conventional 6-inch photomasks to the larger 12-inch variants. Both companies are striving to pioneer the establishment of a DRAM mass production system utilizing high-NA EUV equipment. They plan to integrate this cutting-edge technology into DRAM manufacturing by 2028 and, subsequently, extend its application to the 1.4-nanometer advanced logic process, thereby fostering growth in the wafer foundry sector.

The transition to larger photomasks is a strategic move to surmount the inherent limitations of EUV technology. It promises to boost production efficiency and slash chip manufacturing costs. Notably, the numerical aperture of high-NA EUV surpasses that of traditional EUV by 66%, facilitating the creation of even more intricate circuit patterns.