On September 3, a team of researchers from the Swiss Federal Institute of Technology in Lausanne unveiled a groundbreaking new type of gallium nitride transistor. This innovative transistor boasts an impressive voltage resistance of nearly 4,000 volts, all while maintaining a remarkably low resistance. Such characteristics position it as a prime candidate for utilization in high-voltage power electronics domains, including AI data centers, renewable energy systems, and notably, electric vehicles. The research findings have been duly published in the esteemed journal Nature Electronics.

Presently, the breakdown voltage of commercially accessible gallium nitride power devices predominantly falls within the range of 600 to 650 volts. In stark contrast, the voltage resistance capability of this newly developed transistor surpasses that benchmark by more than fivefold. Moreover, it manages to sustain a low on-resistance, a feature that significantly contributes to minimizing power conversion losses and curbing heat generation.