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Based on data from Tianyancha, on October 17, 2025, Nuclei Intelligent Fusion Semiconductor Technology (Shanghai) Co., Ltd. was officially granted an invention patent authorization. The patent in question is titled 'Control Circuit for Random Access Memory, Random Access Memory, and Electronic Device' (Announcement No. CN114783480B). The application for this patent was filed on April 20, 2022. The core team behind this invention comprises Yuan Wei, Li Feixiong, Hu Zhenbo, among other talented individuals. The patented technology tackles the significant technical hurdle of high costs linked to gating signal localization in DDR memory. It achieves this by refining the design of the random access memory control circuit, which not only substantially cuts down on labor expenses but also boosts memory compatibility.
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