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Samsung is ramping up efforts to introduce its 10 - nanometer sixth - generation DRAM facilities, with the ambitious plan to kick off mass production of HBM4 early in the coming year, aiming to close the gap with its rival SK Hynix. At present, the setup of these facilities has been successfully completed at Samsung's Pyeongtaek campus. Shipments of the produced products are anticipated to take place in the second half of next year.
However, Samsung is confronted with significant challenges in enhancing yield rates. Only when the yield rate surpasses 70% can the company proceed with mass production. This strategic move by Samsung aligns with the release of Nvidia's AI accelerators. It not only underscores Samsung's unwavering determination to compete fiercely in the market but also showcases its potential to further cement its position in the high - end memory market.
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