Recently, the Terahertz Modulation and Communication Technology Team, a collaborative group from the School of Aeronautics and Astronautics and the School of Electronic Science and Engineering at the University of Electronic Science and Technology of China (UESTC), published a research paper in the prestigious international journal Nature Electronics. Titled "A terahertz nonlinear diode chain based on an asymmetric double-layer topology," the study introduces an innovative diode chain design rooted in an asymmetric double-layer topological architecture. This design is specifically tailored for frequency-multiplied signal sources that employ Schottky diodes in terahertz systems.

By integrating microstructure units with multi-die Schottky diodes and harnessing the near-field coupling effects between the upper and lower circuit layers, the research effectively tackles the issue of performance degradation stemming from uneven field distribution. This approach leads to a marked improvement in both output power and frequency multiplication efficiency. Experimental findings reveal that the device achieves an impressive frequency multiplication efficiency of 38% at 0.17 THz, with a continuous-wave output power surpassing 0.3 W (and reaching up to 0.4 W). These results offer fresh perspectives for the advancement of high-performance terahertz RF chips.

The paper's co-first authors are doctoral student Zhou Hongji, Distinguished Associate Researcher Zhou Tianchi, and Professor Zhang Yaxin. The corresponding authors include Professor Zhang Yaxin and Associate Professor Zeng Hongxin from UESTC, Professor Liang Shixiong from Tianjin University, and Professor Daniel M. Mittleman from Brown University. The University of Electronic Science and Technology of China is recognized as the primary institution responsible for the research.