A ferroelectric tunneling junction can regulate tunneling current through ferroelectric polarization reversal, enabling non-volatile writing of information and non-destructive resistance readout in a compact two-terminal structure. It is an important candidate device for high-density non-volatile memory and in-memory computing. However, achieving both a high tunneling resistance ratio and high cycling endurance in such devices is challenging. Novel two-dimensional sliding ferroelectrics, such as 3R-MoS2 and 1T′-ReS2, rely on interlayer relative sliding to achieve polarization reversal, avoiding ion migration and defect accumulation seen in traditional ionic displacement-type ferroelectric materials, with fatigue resistance exceeding 1011 cycles. Nevertheless, their residual polarization strength is 2 to 3 orders of magnitude lower than that of traditional oxide ferroelectrics, making it difficult to generate sufficiently strong electrical readout signals in two-terminal devices.