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Samsung Electronics and ASML have announced the deepening of their strategic cooperation. Samsung will participate in an industry initiative to advance the development of 12-inch photomask technology and plans to first apply ASML's High Numerical Aperture (High NA) Extreme Ultraviolet Lithography (EUV) technology to large-scale DRAM production by 2028. Samsung stated that the 12-inch photomask technology can enhance wafer fab production efficiency, reduce chip manufacturing costs, and minimize limitations in photomask stitching. The High NA EUV technology is expected to extend the scaling roadmap for DRAM processes, simplifying processes and improving efficiency through higher resolution. Additionally, Samsung will collaborate with industry partners to jointly develop 12-inch photomask technology and related infrastructure.
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