Dutch lithography machine giant ASML and TSMC have jointly launched an industry collaboration project aimed at upgrading the size of high numerical aperture (High NA) extreme ultraviolet lithography (EUV) masks from 6 inches to 12 inches. This move will enhance wafer fab production efficiency, reduce chip manufacturing costs, and eliminate stitching limitations. The two parties plan to establish a 12-inch mask trial production line by 2031 and promote the mass production of 12-inch high-NA EUV lithography systems for advanced processes by 2033. TSMC expects to adopt ASML's High NA technology in large-scale advanced process production starting from 2030.
