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Novel Gallium Nitride Transistor Capable of Enduring Voltages Up to Nearly 4,000 Volts
1 day ago /
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Author：小编
Scientists hailing from the Swiss Federal Institute of Technology in Lausanne have successfully engineered an innovative variant of the gallium nitride transistor. This cutting-edge device not only boasts an impressive ability to withstand voltages approaching 4,000 volts but also exhibits remarkably low resistance. It holds significant promise for integration into high-voltage power electronics sectors, encompassing AI data centers, renewable energy frameworks, and electric vehicles.
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