At the IEEE ISPSD 2026, a leading conference in the realm of power semiconductors, the research team headed by Sun Qian from the Suzhou Institute of Nano-Tech and Nano-Bionics, under the Chinese Academy of Sciences, showcased two pivotal research breakthroughs. These breakthroughs offer innovative solutions to the persistent challenges of "gate threshold voltage drift" and "excessive on-resistance" in high-voltage GaN power devices.

In the first study, the team introduced a GaN interlayer into the AlGaN barrier layer, which served as a conduction path for dynamically accumulated holes. This innovation led to a reduction of over 85% in dynamic threshold voltage drift (kept within 0.2V). Furthermore, by capitalizing on the self-limiting etching characteristic of GaN interlayer thermal decomposition, they achieved uniform fabrication of low interface state recessed gates. This resulted in a decrease in the wafer-level standard deviation of the device threshold voltage from 170mV to 70mV and a notable reduction in gate leakage current.

The second study focused on designing a small bevel mesa edge termination structure utilizing high-quality GaN homoepitaxial substrates. Through the photon recycling effect, this structure reduced the specific on-resistance of 3kV vertical GaN diodes to 0.18mΩ·cm², a value an order of magnitude lower than the theoretical limit. Additionally, it demonstrated conductivity modulation capability on par with that of SiC high-voltage devices.

Both research advances experimentally confirmed the feasibility of the theoretical models, marking significant technological strides for the engineering applications of high-voltage GaN power devices.