High-performance MEMS infrared light sources serve as a crucial element in non-dispersive infrared (NDIR) gas sensors. These light sources find extensive applications across various fields, including smart agriculture and environmental monitoring. Nevertheless, the current MEMS infrared light sources are plagued by problems like inconsistent temperature distribution within the radiation area and excessive power consumption.

Recently, a research team headed by Professor Mao Haiyang from the Health Electronics Center at the Institute of Microelectronics has achieved a significant milestone. They have developed a monolithically integrated infrared light source (ANF-IRS) structure using an 8-inch wafer-level process. By incorporating Al nanoparticle-decorated nano-forests (ANFs) as a high-emissivity radiation layer, this innovative structure substantially boosts the device's infrared emission capacity at the target wavelength.

Simultaneously, the research team has made iterative improvements to the microheater structure. This has effectively addressed the issue of uneven temperature distribution that has long troubled traditional light sources, and at the same time, significantly decreased the power consumption density.