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At the 2026 Technology Network Symposium, Micron teased the G11 NAND flash memory, with capacity ramp expected in the second half of 2027. Skipping the G10 generation, this product features over 400 layers of stacking, employs wafer-to-wafer bonding technology, and boasts an area storage density approximately double that of the existing 276-layer G9 NAND. Its I/O rate can reach up to 1.5 times that of the G9 NAND, while reducing data transmission energy consumption by over 25%. Micron also plans to introduce high-mobility materials into NAND to achieve an ultra-dense cell architecture and enhance energy-saving properties. Additionally, Micron introduced two AI-grade data center NAND designs and showcased a comprehensive AI-optimized storage solution.
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