Impacted by U.S. export regulations, ChangXin Memory Technologies, a prominent Chinese memory chip manufacturer, has faced hurdles in procuring cutting-edge equipment for High Bandwidth Memory (HBM). This has posed challenges in directly vying with global leaders in the mainstream AI memory sector. Nevertheless, ChangXin Memory Technologies is striving to make breakthroughs by pivoting towards "customized DRAM."

In July 2026, South Korean media outlets verified that ChangXin has initiated a bonded DRAM R&D facility in Hefei. The goal is to produce 10-nanometer-class high-performance DRAM using DUV equipment, augmented with multi-patterning techniques, thus circumventing U.S. export restrictions. Regarding production capacity, the monthly output of 12-inch wafers at ChangXin's Hefei plant has exceeded 300,000 units (as of the first half of 2026), with an ambitious year-end target ranging from 350,000 to 400,000 units.

Apart from bonded DRAM, ChangXin has also repurposed 20% of its production lines to focus exclusively on HBM, fully targeting the HBM3/HBM3E markets. Moreover, a report from U.S. semiconductor analysis firm SemiAnalysis suggests that ChangXin Memory Technologies is poised to overtake Micron by the end of 2026, ascending to the position of the world's third-largest DRAM supplier.