Recently, the research team under the leadership of Associate Professor Duan Quanzhen, from the School of Integrated Circuit Science and Engineering at Sun Yat-sen University, has published a research paper in the IEEE Transactions on Power Electronics (TPE). This journal is internationally recognized as a leading publication in the realm of analog integrated circuits. The paper, titled “A 6.8 µA Quiescent Current, 200 mA Maximum Load Current, Capacitor-Less, NMOS LDO With Load-Independent Unity-Gain-Bandwidth and Phase Margin for Sensor Applications,” addresses the pressing need for low-power solutions in sensor applications.

In this study, the team has introduced a capacitor-less NMOS low-dropout regulator (LDO) that stands out for its ability to deliver a maximum load current of 200 mA while consuming a mere 6.8 µA of quiescent current. This innovative design ensures that the unity-gain bandwidth and phase margin remain unaffected by variations in load. The LDO was fabricated using a 180-nanometer CMOS process, and subsequent testing has confirmed its stable performance across a broad range of loads. This makes it an ideal power management solution for battery-operated devices, such as IoT sensors and wearable technology.