The School of Integrated Circuits/Advanced Innovation Center for Integrated Circuits at Peking University Presents Three Significant Technical Advancements in Wide Bandgap Semiconductor Power Devices - Chip

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The School of Integrated Circuits/Advanced Innovation Center for Integrated Circuits at Peking University Presents Three Significant Technical Advancements in Wide Bandgap Semiconductor Power Devices

2 day ago / Read about 0 minute

Author：小编

Recently, IEEE ISPSD, a top-tier conference in the field of power semiconductor devices, was held in Las Vegas, USA. Three high-level papers from the School of Integrated Circuits at Peking University were selected, showcasing their latest research achievements to international peers. The content covers gate reliability of GaN HEMT devices, ultra-high voltage GaN lateral rectifiers, and integrated GaN bidirectional devices.

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