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Samsung’s HBM4E Yield Climbs Above 70%, Ushering in a Stable Development Phase for 7th-Gen AI Memory
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Author：小编
On July 1, 2026, the Chief Technology Officer of Samsung Electronics revealed during an internal business briefing of the DS division held on June 30 that the yield rate for HBM4E reliability testing has surpassed the 70% mark. This milestone indicates a stable and promising trajectory in its development. In addition, the next-generation 10nm-class 7th-gen DRAM process (D1d) has secured technological competitiveness over its rivals, with the company aiming to finalize Production Readiness Authentication (PRA) by November of this year.
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