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Toshiba Launches 80V N-Channel Power MOSFET Utilizing the Latest Generation Process
2 day ago /
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Author：小编
Toshiba has launched the 80V N-channel power MOSFET—TPM1R408RH, which utilizes the latest U-MOS11-H process. Designed for switching power supplies in industrial equipment such as AI data centers and communication base stations, the product is now available for shipment. It features a maximum drain-source on-resistance of 1.4 milliohms, representing a reduction of approximately 26% compared to the previous generation. Its figure of merit, RDS(ON)×Qg, has been reduced by about 45%. Utilizing the SOP Advance(E) package, it can suppress switching spike voltages and reduce electromagnetic interference.
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