SK Hynix has declared its intention to swiftly elevate the share of its sixth-generation 10-nanometer-class (1c) process technology. Concurrently, it will ramp up sales initiatives for DDR5 and LPDDR5 SOCAMM modules tailored for AI servers, thereby sharpening its focus on DRAM products with high added value. In response to the burgeoning demand for HBM, the company is set to optimize production capacity at its M15X facility by year-end, aiming to scale up HBM4 output. As a result, it is projected that HBM4 shipments and revenue will eclipse those of HBM3E in the fourth quarter, propelling it to the forefront as the primary product offering.
As for NAND flash memory, the company is poised to augment the proportion of its 321-layer process technology within its domestic production capacity in South Korea, targeting a share exceeding 50% in the fourth quarter. This move is expected to bolster the supply of high-performance, large-capacity eSSDs.