Recently, the National Key Laboratory of Integrated Circuit Materials, situated within the Shanghai Institute of Microsystem and Information Technology (SIMIT) under the Chinese Academy of Sciences, has made significant strides—in collaboration with the Shanghai Integrated Circuit Materials Research Institute—in the development of Ku-band radio frequency (RF) filters. These filters are based on periodically poled single-crystal aluminum nitride (AlN), a cutting-edge material in the field. Leveraging the growth technology of periodically poled single-crystal AlN piezoelectric thin-film materials, the research team has successfully engineered Ku-band RF resonators and filters that excel in both temperature stability and high power handling capabilities. Moreover, the team has conducted a comprehensive analysis of the dispersion characteristics and acoustic loss mechanisms inherent in periodically poled devices. This work lays a robust experimental and theoretical groundwork for the design of high-frequency RF filters, which are crucial for advancing 6G and satellite communications technologies.