On September 11, 2026, a pioneering breakthrough was made by a research team led by Academician Hao Yue from Xidian University, in concert with experts from City University of Hong Kong and Fudan University. Their study focused on the failure mechanisms within ferroelectric materials, culminating in the publication of their significant findings in the esteemed journal Science.

The team meticulously explored the atomic-level dynamics, charting the intricate evolution of internal defects in wurtzite-structured ferroelectric materials when subjected to cyclic electric fields. They introduced a groundbreaking concept termed "nitrogen vacancy topological stabilization" for defect regulation. By implementing a dual confinement strategy that operates simultaneously in spatial and energetic dimensions, the researchers successfully manipulated the pathways of defect evolution. This achievement not only offers a fresh perspective on overcoming the durability issues plaguing ferroelectric materials but also lays down a novel theoretical framework and practical pathway. It paves the way for the development of highly reliable, high-density wurtzite ferroelectric memory devices and advances the field of ferroelectric material regulation.