In the early hours of July 17 (Beijing Time), a research team led by Peng Zhou and Chunsen Liu from Fudan University’s National Key Laboratory of Integrated Chips and Systems published groundbreaking findings in the prestigious journal Science. The team’s innovative "quantum flash memory" technology successfully achieved a coplanar "unified" structure of drain-channel-source, allowing, for the first time, clear observation of non-volatile single-electron storage behavior at room temperature (27°C). This achievement challenges the long-held scientific consensus that single-electron storage is unachievable at ambient conditions, establishing a new theoretical framework for single-electron quantum storage and providing a vital theoretical foundation for the computing power revolution in the AI era.

Currently, the team has developed a complete ecosystem spanning from foundational material and device innovation to high-end chip integration and practical applications. They are now accelerating efforts toward industrialization, with plans to introduce products to the market within the next 1 to 3 years. This includes founding a company to collaborate with leading AI clients, securing strategic partnerships, and harnessing support from both society and government to convert original innovations into impactful new productive forces.