Tsinghua News Network, July 13th – A research team spearheaded by Professor Liu Kai of the School of Materials Science and Engineering and Associate Professor Tang Jianshi of the School of Integrated Circuits at Tsinghua University has made significant strides in developing a fully two-dimensional high-temperature ion-gated synaptic transistor (A2D-HTIGST). This innovative device seamlessly integrates a CuInP₂S₆ ion-gated layer, an h-BN electron-blocking layer, and a WS₂ channel. Leveraging the interlayer migration of Cu⁺ ions, driven by an electric field in high-temperature conditions, it attains a high on/off ratio, a wide hysteresis window, and exceptional synaptic plasticity. At 200°C, its energy consumption per single pulse is remarkably low, at just 3 femtojoules. Moreover, it exhibits promising potential in applications such as high-temperature self-powered handwritten digit recognition and sunspot number prediction using reservoir computing, paving a new avenue for energy-efficient neuromorphic computing in high-temperature environments.