Apple has embarked on testing DRAM memory chips sourced from ChangXin Memory Technologies, with the intention of incorporating them into devices destined for the Chinese market. At present, this process is undergoing evaluation, and a final determination regarding commercial mass production remains pending. In parallel, Apple is actively engaging in lobbying efforts with the U.S. government to broaden the utilization of ChangXin's offerings. Additionally, the company is contemplating procuring NAND flash memory from Yangtze Memory Technologies, as part of a broader strategy to bolster the robustness of its supply chain.
The surge in demand for AI technology has prompted major memory chip manufacturers to redirect their production towards High Bandwidth Memory (HBM), resulting in a constrained supply and subsequent price escalations for consumer-grade memory chips. This trend has, in turn, necessitated price adjustments for several Apple products. A research report issued by Bank of America highlights three primary obstacles that Apple must overcome to adopt ChangXin's DRAM chips on a large scale: geopolitical policy constraints, discrepancies in technological specifications, and the potential for patent litigation.
Even if Apple decides to proceed with the adoption, initial implementation is likely to be confined to entry-level models, with order volumes expected to remain modest. Nonetheless, Apple's initiative could potentially strengthen its negotiating leverage with the three leading DRAM manufacturers. ChangXin Memory has emerged as the world's fourth-largest DRAM producer, with projections indicating that its global market share will reach 7.67% by the fourth quarter of 2025. Furthermore, its wafer production capacity is anticipated to increase to 15% by 2028. However, the company is currently operating at full capacity and faces challenges in meeting the demands of local enterprises, raising questions about its ability to supply Apple on a large scale.
