On July 3, Kioxia made an announcement regarding the official commencement of sample deliveries for its cutting-edge 10th-generation BiCS FLASH™ 3D flash memory. This innovative product boasts a sophisticated 332-layer stacked architecture and is crafted at Kioxia's state-of-the-art Fab2 wafer fabrication facility located in Kitakami, Iwate Prefecture, Japan. It seamlessly integrates two pivotal technologies: CMOS Bonded to Array (CBA) and Octuplex Pitch Selectable (OPS).

The inaugural offering in this line is a 1Tb TLC variant, engineered to support Toggle DDR6.0, SCA protocol, and PI-LTT technology. It features an impressive I/O interface speed of up to 4800MT/s. The storage density has been significantly enhanced, reaching over 29Gb/mm², marking a substantial 59% increase compared to its predecessor. Moreover, the product exhibits a notable reduction in output power consumption by 34%, an improvement in read energy efficiency by 30%, a decrease in input power consumption by 10%, and an enhancement in write energy efficiency by 18%.

This advanced flash memory is poised to make its debut in enterprise-grade solid-state drives and data center storage solutions, catering to the rigorous high-performance computing requirements of AI training and inference processes. Kioxia has outlined its strategy to commence mass production of the BiCS10 flash memory in 2027.