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Our reporters have garnered information from the Institute of Metal Research at the Chinese Academy of Sciences, revealing that a research team, helmed by Sun Dongming and Liu Chi from the institute and working in tandem with various research entities, has made a monumental leap in the realm of high-frequency transistors. This team has triumphantly crafted the world's inaugural silicon-graphene-germanium barrier transistor, which has successfully navigated radio-frequency testing. This accomplishment not only establishes a fresh benchmark for the cutoff frequency of vertical two-dimensional base-region transistors but also attains the pinnacle of global achievement in transistor current gain. The pertinent discoveries were unveiled in the esteemed international academic journal, Nature Communications, on June 6 (Beijing Time).
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