A research team led by Yu Wenjie at the National Key Laboratory of Integrated Circuit Materials, part of the Shanghai Institute of Microsystem and Information Technology at the Chinese Academy of Sciences, has introduced a novel integration method for vacuum channel electron devices. This innovative approach, which synergizes chemical mechanical polishing (CMP) with selective wet etching, has successfully crafted prototype devices featuring 14nm vacuum channels. These devices exhibit a low turn-on voltage and a high emission current, while being fully compatible with CMOS processes. The simplicity, high controllability, and scalability of this method offer significant insights for the mass production of vacuum channel electron devices.
