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Semiconductor chips and their internal components are increasingly being miniaturized to extreme levels of ultrathinness. However, as these devices become thinner, conducting electricity through them becomes more challenging. To tackle this problem, a research team from the Pohang University of Science and Technology in South Korea has revamped the metal-semiconductor contact architecture of ultrathin tellurium transistors. They have developed a groundbreaking technology aimed at minimizing contact resistance. This novel approach involves locally thickening the key areas that come into contact with the electrodes. As a result, it slashes the contact resistance to just 1/50th of its original value and markedly boosts performance at low temperatures. The pertinent research findings have been featured in ACS Nano, a journal published by the American Chemical Society.
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