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Inauguration and Planning Discussion for the National Key R&D Program Project on High-Efficiency Gallium Nitride-Based Bidirectional Switching Power Electronic Devices Hosted by Dalian University of T
2025-05-28 /
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Author：小编
On May 21, Dalian served as the venue for the official launch and implementation plan discussion of the National Key R&D Program project titled "Research on High-efficiency Gallium Nitride-based Bidirectional Switching Power Electronic Devices." This project, headed by Professor Huang Huolin from Dalian University of Technology, involves a collaborative effort among several prestigious institutions, including Xidian University, University of Electronic Science and Technology of China, Nanjing University, Suzhou NEX Power Semiconductors, and Runxin Microelectronics (Dalian) Co., Ltd. All parties involved will work in harmony to advance the research on gallium nitride-based bidirectional switching power electronic devices.
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