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The Institute of Microelectronics at the Chinese Academy of Sciences Achieves Significant Progress in Sub-nanosecond Ultrafast MRAM Research
2025-05-28 /
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Author：小编
The research group focusing on three-dimensional memory devices and processes at the National Key Laboratory of Integrated Circuit Manufacturing Technology, part of the Chinese Academy of Sciences, has unveiled an ultra-fast electrical writing technique that operates without the need for magnetic moment precession or external magnetic fields. This breakthrough stems from a unique field-like spin torque, addressing the physical constraints that limit the writing mechanism of MRAM. This innovative method holds promise for fundamentally resolving the critical speed and high-density integration challenges faced by MRAM technology.
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