The research team, headed by Professor Chen Weijin from the School of Materials Science and Engineering at Sun Yat-sen University, in collaboration with the Guangdong Key Laboratory of Magnetoelectric Physics and Devices, has unveiled a groundbreaking strategy for multi-bit information access. This innovative approach leverages the multi-step polarization switching properties of ferroelectric capacitors. Utilizing flip current sensing technology, this strategy allows for the precise reading of polarization states across different ferroelectric domains using just a single sensing amplifier and a single operation. The resultant operation speed is on the nanosecond scale, offering a significant enhancement. This development presents a practical solution for boosting the storage density of commercial ferroelectric memory products and enabling integrated memory-computing operations.