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A team led by Hu Youfan and Peng Lianmao from the School of Electronics Engineering at Peking University has made groundbreaking discoveries in the realm of carbon-based electronics. For the first time, they observed the intrinsic negative differential resistance effect and current oversaturation phenomenon in the subthreshold region of carbon nanotube CMOS transistors. Their research underscores that carbon-based CMOS transistors exhibit an extended and smooth transition boundary between negative and positive differential resistance, accompanied by current oversaturation and intrinsic gain singularities. These findings highlight the promising potential of carbon-based technology in the development of the next generation of analog and mixed-signal integrated circuits.
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