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Tianlangxin Semiconductor Unveils Patent for Innovative Shielded Gate MOSFET Structure, Fabrication Method, and Chip
2025-04-24 /
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Author：小编
Shenzhen Tianlangxin Semiconductor Co., Ltd. has proudly announced the acquisition of a patent titled "A New Type of Shielded Gate MOSFET Structure and Its Preparation Method, and Chip," with application publication number CN119584593A, released on March 7, 2025. This patent milestone significantly bolsters Tianlangxin's technological prowess in the semiconductor sector, infusing fresh impetus into the growth trajectory of the domestic semiconductor industry.
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