Zhixin Microelectronics Granted Patent for 'Highly Reliable LDMOS ESD Device with Electromagnetic Interference Resistance'

2025-01-14

Beijing Zhixin Microelectronics Technology Co., Ltd. has recently been granted a patent, titled 'Highly Reliable LDMOS Electrostatic Discharge (ESD) Device Resistant to Electromagnetic Environmental Interference, Fabrication Method, and Chip', with authorization announcement number CN118073425B. The patent application was submitted on April 24, 2024, and was officially announced on December 13, 2024. This patent falls within the realm of semiconductor technology, leveraging innovative materials and structural designs to bolster the electromagnetic interference (EMI) resistance and electrostatic discharge (ESD) capabilities of LDMOS devices.

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