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Japan's Resonac Achieves Breakthrough with 300mm SiC Substrate Development
2 day ago /
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Author：小编
In September 2026, Resonac Holdings, a prominent Japanese semiconductor material company, made a significant announcement: it had successfully developed a 300mm (12-inch) silicon carbide (SiC) substrate. This achievement marks Resonac as the inaugural company in Japan to master this cutting-edge technology. When compared to the prevailing 150mm substrates in the market, the larger 300mm substrate has the potential to theoretically quadruple the yield per integrated circuit wafer. Such an advancement not only paves the way for cost reductions in large-scale production but also enhances the energy efficiency of power semiconductors, representing a substantial leap forward in the industry.
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