A research team hailing from the Institute of Semiconductors, Chinese Academy of Sciences, has successfully achieved atomic slippage at the remarkably precise 0.1-nanometer (or Ångström) scale. This feat was accomplished through the innovative engineering of two-dimensional van der Waals heterojunction interfaces, resulting in resistance alterations by an astonishing tens of millions of times. This significant breakthrough effectively tackles the longstanding challenge of maintaining an optimal balance between a high on-off ratio and exceptional durability in sliding ferroelectric tunneling junctions. The team's remarkable findings have been published in the esteemed journal Science, opening up exciting possibilities for future applications in end-user hardware devices, including mobile phones and computers. Moreover, this advancement paves the way for the development of revolutionary computing architectures that seamlessly integrate storage and computational capabilities.