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Samsung has revealed its roadmap for next-generation NAND Flash technology, aiming to launch SSD products with 900 to 1,000 layers around 2030. According to the plan, Samsung will achieve a 420-layer solution by 2029, advance to over 560 layers by 2030, and double the layer count in the early next decade, moving towards over 1,000 layers. The roadmap also showcases a 900 to 1,000-layer solution, which packages two sets of 450-layer cells within a single chip through CMB connection, increasing the capacity of an 8TB QLC M.2 SSD to a maximum of 32TB. Key challenges for mass production include wafer warping and interlayer alignment errors, with Samsung planning to adopt an Upper Chuck Design solution to control warping and utilize Overlay Correction technology to reduce misalignment risks.
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