Recently, the research team at Beihang University’s School of Integrated Circuits, led by Zhao Weisheng, Zhang Yue, and Zhang Kun, has made a notable breakthrough in the field of magnetic spin logic devices (MESO). One persistent challenge in MESO technology has been the weak 'spin-to-charge conversion readout signal.' To tackle this, the team introduced a new architecture known as 'magnetic tunnel junction (MTJ)-enhanced MESO logic.' This innovative design integrates 'logic operations' with 'magnetic storage' by sharing a ferromagnetic layer.

By utilizing the 'spin filtering effect' and the distinct resistance properties of MgO-based magnetic tunnel junctions, the researchers addressed the issue of weak signals through enhancements in two key dimensions: 'spin polarization enhancement' and 'current modulation amplification.' Experimental findings reveal that this approach successfully increased the device’s readout voltage from the microvolt level to 1.5 millivolts at room temperature. This marks a significant improvement—two orders of magnitude—over traditional MESO devices, setting a new benchmark for room-temperature readout signals in similar technologies.

The related research findings were published in the prestigious international journal Nature Communications under the title 'Giant spin-orbit magnetic state readout enhanced by a magnetic tunnel junction.' This work opens up fresh avenues for the practical use of ultra-low-power logic chips in the post-Moore era. The study was a collaborative endeavor between the National Key Laboratory of Spin Chips at the Hangzhou International Innovation Institute of Beihang University and the School of Integrated Circuit Science and Engineering at Beihang University. It received support from initiatives such as the Major Research Plan of the National Natural Science Foundation of China.