On May 29, Samsung Electronics made an announcement stating that it has commenced the delivery of the inaugural batch of 12-layer, 48GB HBM4E samples to prominent global customers. This move signifies a pivotal advancement in next-generation AI high-bandwidth memory technology. Building on its groundbreaking achievement of mass-producing and commercializing HBM4 earlier in the year, Samsung has once again positioned itself at the forefront of the HBM market, offering crucial support for the enhancement of AI computing infrastructure. HBM4E leverages the sixth-generation 10nm DRAM process along with a 4nm logic substrate, resulting in a performance boost of over 20%, a capacity increase exceeding 30%, a 16% improvement in energy efficiency, and notably enhanced thermal dissipation efficiency. It is tailored specifically for large-scale models, generative AI, and high-performance computing applications.