Samsung Cuts HBM R&D Cycle to a Year, Fully Focused on Securing NVIDIA Orders
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Author:小编   

On April 18, 2026, news emerged that Samsung Electronics has opted to slash the research and development cycle for High Bandwidth Memory (HBM) from two years down to just one year. The tech giant plans to roll out a new generation of HBM each year, perfectly timed to coincide with the launch of new AI accelerators from clients like NVIDIA. Samsung's most recently mass-produced offering is HBM3E, and the upcoming HBM4 is slated for release alongside NVIDIA's Vera Rubin and AMD Instinct MI400 platforms. The inaugural batch of HBM4E samples is set to be manufactured in May 2026, with NVIDIA receiving top priority for evaluation.