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Samsung Electronics Accelerates R&D of Next-Generation High-Bandwidth Memory, with First Batch of HBM4E to be Produced in May
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Author：小编
Samsung Electronics is accelerating the research and development of its next-generation high-bandwidth memory (HBM), with plans to produce the first batch of HBM4E samples meeting NVIDIA's standards in May 2026. The goal is to successfully manufacture samples of the HBM4E core logic chips through its foundry division by the middle of next month. After completing internal performance evaluations, these samples will be sent to NVIDIA for verification. The HBM4E will utilize 1c nm DRAM Die and 4nm Base Die, with optimized process details.
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