III-V compound semiconductor photonic crystal lasers, due to their small size and low power consumption, demonstrate tremendous application potential in on-chip optical interconnection systems. Although traditional vertically epitaxially fabricated photonic crystal lasers exhibit excellent performance, the fabrication of photonic crystal thin films requires complex processes such as substrate hollow-out or thin-film transfer, resulting in poor structural stability of the devices. Additionally, with the horizontal quantum well optical gain layer covering the entire cavity, after being penetrated by etched air holes, non-radiative recombination of carriers increases, making it difficult to improve pumping efficiency. The team led by Associate Professor Han Yu and Professor Yu Siyuan from Sun Yat-sen University innovatively rotated the entire growth process by 90 degrees, employing the 'horizontal lateral selective area epitaxy' technique to directly grow an indium phosphide (InP) thin film containing buried vertical quantum wells and precisely position the quantum wells.