Recently, a research team headed by Professor Ou Xin from the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, joined forces with the team led by Professor Tobias J. Kippenberg from the Swiss Federal Institute of Technology in Lausanne and the team under the guidance of Professor Christian Koos from the Karlsruhe Institute of Technology in Germany. Together, they have made remarkable strides in the wafer-level heterogeneous integration of thin-film lithium tantalate (LiTaO₃, abbreviated as LT) and silicon nitride (Si₃N₄) photonic chips. The research team has successfully developed an innovative optoelectronic platform that merges the benefits of low optical loss with linear electro-optic (Pockels) modulation. This achievement enables efficient and high-speed electro-optic modulation, boasting a modulation efficiency of 4.08 V·cm and an electro-optic response 3dB bandwidth of around 100 GHz. During high-speed communication demonstrations, the net signal transmission rate soared to 333 Gbit/s under intensity modulation (IMDD) and an impressive 581 Gbit/s under coherent IQ modulation. This research enriches the existing silicon nitride photonic platform by incorporating high-speed electro-optic modulation capabilities, thereby offering a scalable and novel technological pathway for on-chip optical systems aimed at high-speed interconnects, RF photonics, and analog signal processing. The pertinent findings have been published in the esteemed international academic journal Nature Communications.