Foreign media outlets have reported that, in early 2025, a clandestine laboratory located in China successfully assembled a prototype of the nation's inaugural Extreme Ultraviolet (EUV) lithography system. This cutting-edge apparatus was constructed within a highly secure facility situated in Shenzhen. The prototype, so sizable that it nearly spans the entire factory floor, is purportedly the result of reverse engineering efforts based on existing lithography machine products from ASML.

The Chinese-developed prototype utilizes the same Laser Produced Plasma (LPP) technology found in ASML's renowned Twinscan NXE series. This advanced technology enables the generation of extreme ultraviolet light with a precise wavelength of 13.5 nanometers, a critical component for modern semiconductor manufacturing.

At present, the prototype is undergoing covert testing procedures. While it has demonstrated the capability to produce extreme ultraviolet light, it still falls short of manufacturing functional chips. This limitation stems from the inability to replicate the high-precision optical systems that are integral to ASML's designs.

Looking ahead, China has outlined plans to commence trial production of prototype chips utilizing this EUV lithography machine in 2028, marking a significant step forward in its quest for semiconductor self-sufficiency.