Recently, the IEEE International Electron Devices Meeting (IEDM 2025), often hailed as the "Olympic Games" of the electronic devices sector, convened in San Francisco, USA. The event was themed "Field-Effect Transistors (FETs) 100 Years: Charting the Course for Future Device Innovation." Since its inception in 1955, IEDM has served as a pivotal forum for the global exchange of ideas in semiconductor device technology, design, manufacturing, physics, and materials.

At this year's gathering, a host of groundbreaking technological advancements were showcased:

• The Mobile Phone Division of Xiaomi Corporation, in collaboration with Suzhou NanoMicro Electronics & High Power Semiconductor Co., Ltd. and The Hong Kong University of Science and Technology, took the lead in presenting a high-efficiency, low-voltage silicon-based gallium nitride RF power amplifier tailored for mobile terminals. This achievement marks a historic milestone in the integration of gallium nitride high electron mobility transistor (GaN HEMT) technology into mobile terminal communications.
• The Shanghai Institute of Microsystems and Information Technology introduced a unified electrothermal modeling framework rooted in physics-informed graph neural networks. This framework facilitates efficient and precise modeling of wide-bandgap semiconductor power devices under diverse conditions, including multi-scale, multi-structure, and multi-bias scenarios. It offers fresh perspectives for advancing the full-spectrum intelligence of the "design-simulation-modeling" process for power devices.
• ChangXin Memory Technologies, in addition to showcasing its standard 16Gb die, highlighted the launch of a 24Gb high-capacity die. The company also unveiled seven major modules based on its DDR5 products, achieving comprehensive coverage across all application scenarios, from servers and workstations to personal computers.

These accomplishments not only underscore the cutting-edge research in academia but also provide a crucial vantage point for understanding the future trajectory of storage technologies and the evolving industrial landscape.